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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP100P06PLG-E1-AY NP100P06PLG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
* Super low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = -10 V, ID = -50 A) RDS(on)2 = 7.8 m MAX. (VGS = -4.5 V, ID = -50 A) * High current rating: ID(DC) = m100 A * Built-in gate protection diode (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
-60 m20 m100 m300 200 1.8 175 -55 to +175 64 420
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.75 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18695EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan
2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NP100P06PLG
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -50 A VGS = -10 V, ID = -50 A VGS = -4.5 V, ID = -50 A VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -30 V, ID = -50 A, VGS = -10 V, RG = 0
MIN.
TYP.
MAX. -10 m10
UNIT
A A
V S
-1.0 43
-1.6 86 4.4 5.0 15000 1810 840 28 35 275 100
-2.5
Drain to Source On-state Resistance
6.0 7.8
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = -48 V, VGS = -10 V, ID = -100 A IF = -100 A, VGS = 0 V IF = -100 A, VGS = 0 V, di/dt = -100 A/s
300 35 85 0.92 70 135 1.5
V ns nC
Note Pulsed test PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL RG VDD VDS(-)
90% 10% 10% 90%
VGS(-) VGS
Wave Form
0
10%
VGS
90%
IAS
VDS
0
td(on) ton
tr td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = -2 mA PG. 50 RL VDD
2
Data Sheet D18695EJ3V0DS
NP100P06PLG
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 240
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
200 160 120 80 40 0 0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C
-1000
ID(pulse)
PW =1
ID - Drain Current - A
-100
RDS(on) Limited (VGS = -10 V)
i0
0
ID(DC)
s
1i
DC
m
i
s
1i 0 m
-10
i
w Po D er ip iss io at
s
-1
TC = 25C Single Pulse
d it e im nL
-0.1 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 100 10 1 Rth(ch-C) = 0.75C/Wi 0.1 0.01 Single Pulse 0.001 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Rth(ch-A) = 83.3C/Wi
Data Sheet D18695EJ3V0DS
3
NP100P06PLG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-300 -250
ID - Drain Current - A
-1000 -100 VDS = -10V Pulsed
-200 -150 -100 -50 Pulsed 0 0 -0.5 -1 -1.5 -2
VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
ID - Drain Current - A
VGS = -10 V -4.5 V
-10 -1 -0.1 -0.01 -0.001 0 -1 -2 -3 -4 -5
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Tch = -55C -25C 25C 75C 125C 150C 175C
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
-3 -2.5 -2 -1.5 -1 -0.5 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
1000 Tch = -55C -25C 25C 75C
100
10 125C 150C 175C VDS = -10 V Pulsed 0.1 -0.1 -1 -10 -100 -1000
1
VDS = -10 V ID = -1 mA
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
10 8 6 4 2 Pulsed 0 -1 -10 -100 -1000 ID - Drain Current - A
20 16 12 8 4 Pulsed 0 0 -5 -10 -15 -20
VGS - Gate to Source Voltage - V
VGS = -4.5 V
ID = -100 A -50 A -20 A
-10 V
4
Data Sheet D18695EJ3V0DS
NP100P06PLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
12
Ciss, Coss, Crss - Capacitance - pF
100000 Ciss 10000 Coss
10 8 6 4 2 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000 td(off)
VGS = -4.5 V
-10 V
1000 VGS = 0 V f = 1 MHz 100 -0.1 -1
Crss
ID = -50 A Pulsed
-10
-100
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60 -12 VDD = -48 V -30 V -12 V -10 -8 -6 VGS -4 -2 ID = -100 A 150 200 250 300 -0 350
VDS - Drain to Source Voltage - V
-50 -40 -30 -20 -10 0
100 tr td(on) 10 VDD = -30 V VGS = -10 V RG = 0 -1
tf
VDS 0 50 100
1 -0.1
-10
-100
-1000
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
-1000
IF - Diode Forward Current - A
1000
-100 -10 -1 -0.1 Pulsed -0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery Time - ns
VGS = -10 V
0V
100
10 di/dt = -100 A/s VGS = 0 V 1 -0.1 -1 -10 -100
IF - Diode Forward Current - A
Data Sheet D18695EJ3V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
NP100P06PLG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 0.3 7.88 MIN.
8.0 TYP. 1.35 0.3
No plating
4.45 0.2 1.3 0.2
4
9.15 0.3 15.25 0.5
0.5
0.025 to 0.25
0.6 0
2.54 12 3
2.5
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate Gate Protection Diode
Body Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D18695EJ3V0DS
2.54 0.25
0.75 0.2
.2 0 to 8 0.25
NP100P06PLG
* The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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